Manufacturer Part Number
15C01M-TL-E
Manufacturer
onsemi
Introduction
High-performance NPN bipolar junction transistor (BJT) in a small surface-mount package
Product Features and Performance
High current capacity up to 700 mA
High transition frequency of 330 MHz
Low collector-emitter saturation voltage of 300 mV at 10 mA, 200 mA
Wide operating temperature range up to 150°C
Product Advantages
Compact surface-mount package
High power efficiency
Excellent high-frequency performance
Robust thermal characteristics
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 15 V
Collector Cutoff Current (Max): 100 nA
DC Current Gain (Min): 300 at 10 mA, 2 V
Quality and Safety Features
RoHS3 compliant
Reliable performance and long lifespan
Compatibility
Suitable for a wide range of electronic applications
Application Areas
Switching circuits
Amplifier circuits
Power management
Radio frequency (RF) circuits
Product Lifecycle
Current production model
Ongoing availability and support
Several Key Reasons to Choose This Product
High-performance NPN BJT in a compact package
Excellent power efficiency and thermal characteristics
Robust design and reliable performance
Suitable for a wide range of electronic applications