Manufacturer Part Number
MAT01GHZ
Manufacturer
Analog Devices, Inc.
Introduction
Dual NPN Bipolar Junction Transistor (BJT) array
Designed for analog and digital applications
Product Features and Performance
High switching speed
Low noise
High gain
Excellent thermal stability
Tight parameter matching between transistor pairs
Product Advantages
Improved circuit performance
Reduced component count
Simplified design
Enhanced reliability
Key Technical Parameters
Operating Temperature: -55°C to 150°C
Power Dissipation: 500mW
Collector-Emitter Breakdown Voltage: 45V
Collector Current (Max): 25mA
Collector Cutoff Current: 400nA
Collector-Emitter Saturation Voltage: 800mV @ 1mA, 10mA
Quality and Safety Features
RoHS3 compliant
Reliable metal can package (TO-78-6)
Compatibility
Through-hole mounting
Application Areas
Analog and digital circuits
Amplifiers
Switches
Drivers
Logic gates
Product Lifecycle
Currently in production
Replacements and upgrades available
Key Reasons to Choose
High-performance transistor pair
Excellent thermal stability
Tight parameter matching
Simplified circuit design
Reliable metal package
RoHS compliance