Manufacturer Part Number
LTC7000EMSE#TRPBF
Manufacturer
Analog Devices
Introduction
High-Voltage, High-Side N-Channel MOSFET Gate Driver
Product Features and Performance
Drives N-Channel MOSFET Gates
High-Side Configuration
Single Channel Output
Wide Input Voltage Range: 3.5V to 135V
Fast Rise and Fall Times: 90ns/40ns
Robust Temperature Range: -40°C to 125°C
Integrated Bootstrap Diode
Under-Voltage Lockout (UVLO)
Product Advantages
Suitable for High Voltage Applications
Highly Integrated for Simplified Design
Efficient Gate Driving Capabilities
Supports Fast Switching Applications
Key Technical Parameters
Supply Voltage: 3.5V ~ 135V
Logic Voltage - VIL, VIH: 1.8V, 1.7V
High Side Voltage - Max (Bootstrap): 135 V
Rise / Fall Time (Typical): 90 ns / 40 ns
Operating Temperature Range: -40°C ~ 125°C
Quality and Safety Features
TJ Operating Temperature Range Ensures Reliability
Internal Bootstrap Diode Provides Charge Pumping Efficiency
Protection Against Over and Under Voltage Conditions
Compatibility
Suited for N-Channel MOSFET Implementation
Compatible with a Broad Range of Control Inputs
Application Areas
Power Supply Regulation
Motor Control
Industrial Applications
Automotive Electronics
High-Efficiency Power Converters
Product Lifecycle
Active Product Status
No Indication of Discontinuation
Replacements or Upgrades Not Specified
Several Key Reasons to Choose This Product
Ability to Operate at High Voltages Up to 135V
Fast Switching with Low Rise and Fall Times Enhancing Efficiency
Adaptability to Harsh Operating Conditions from -40°C to 125°C
Ease of Integration with Small Footprint Package
Surface Mount Compatibility for Robust PCB Design
Tape and Reel Packaging for Automated Assembly Processes
Power Management Specialization for Energy-Sensitive Applications