Manufacturer Part Number
LTC2862HS8-2#TRPBF
Manufacturer
Analog Devices
Introduction
The LTC2862HS8-2#TRPBF is a robust RS422/RS485 transceiver designed for reliable serial communication with enhanced protection features, ideal for demanding industrial environments.
Product Features and Performance
RS422, RS485 protocol support for flexible serial communication
Single Driver/Receiver configuration
Half Duplex communication for bidirectional data flow on a single pair
Receiver Hysteresis of 150 mV for better noise immunity
Data Rate of 250kbps, suitable for moderate speed applications
Voltage Supply range from 3V to 5.5V, supporting a variety of logic levels
Operating Temperature from -40°C to 125°C, ensuring reliability in extreme conditions
Surface Mount 8-SOIC package for compact installation
Product Advantages
Enhanced noise immunity with receiver hysteresis
Wide supply voltage range for flexible power requirements
High-temperature operation capability for industrial environments
Compact surface mount package for space-sensitive applications
Key Technical Parameters
Protocol: RS422, RS485
Number of Drivers/Receivers: 1/1
Duplex: Half
Receiver Hysteresis: 150 mV
Data Rate: 250kbps
Voltage Supply: 3V to 5.5V
Operating Temperature: -40°C to 125°C
Quality and Safety Features
Built to withstand harsh industrial environments
Complies with stringent quality standards of Analog Devices
Compatibility
Compatible with RS422 and RS485 standards for broad application use
Application Areas
Industrial control systems
Building automation
Networked communication devices
Data acquisition systems
Product Lifecycle
Status: Active
Not currently nearing discontinuation, with replacements or upgrades readily available as needed
Several Key Reasons to Choose This Product
Supports key industrial communication protocols, RS422 and RS485
Built for noise immunity and reliability in harsh conditions
Operates across a wide voltage and temperature range
Compact and suitable for space-constrained applications
Produced by Analog Devices, a leader in high-performance semiconductors