Manufacturer Part Number
LT1160CS#PBF
Manufacturer
Analog Devices
Introduction
The LT1160CS#PBF is a gate driver specifically designed for power management applications, suitable for driving N-Channel MOSFETs in a half-bridge configuration.
Product Features and Performance
Capable of driving two independent channels
Supports a high side voltage up to 60V for bootstrap configurations
Provides robust peak output currents of 1.5A for both sourcing and sinking
Equipped with non-inverting input type
Features fast rise and fall times of 130ns and 60ns respectively
Operates over a wide voltage supply range from 10V to 15V
Logic voltage levels are defined at 0.8V (VIL) and 2V (VIH) for clear signal processing
Product Advantages
Provides strong drive capability with 1.5A peak output current
Ensures quick switching with short rise and fall times
High reliability and operational stability from 0°C to 125°C
Supports a variety of MOSFETs due to its flexible 60V high side voltage
Key Technical Parameters
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage Supply: 10V ~ 15V
Current Peak Output (Source, Sink): 1.5A
High Side Voltage Max (Bootstrap): 60V
Rise / Fall Time: 130ns / 60ns
Operating Temperature: 0°C ~ 125°C
Quality and Safety Features
Ensures consistent performance within the specified operating temperature range
Built for durability and high reliability in various environmental conditions
Compatibility
Compatible with a broad range of N-Channel MOSFETs
Adjustable for various half-bridge gate driving applications
Application Areas
Power management systems
Motor control circuits
Industrial automation systems
Product Lifecycle
Current status: Active
Continuously supported with no stated plans for discontinuation
Upgrades and replacements are available within Analog Devices product range
Several Key Reasons to Choose This Product
High peak output current (1.5A) suitable for demanding applications
Fast switching capabilities enhance the overall efficiency of power systems
Wide operating temperature range ensures stability in variable environments
Versatile compatibility with various N-Channel MOSFETs>\<^