Manufacturer Part Number
ADG506AKNZ
Manufacturer
Analog Devices
Introduction
The ADG506AKNZ is a multiplexer using CMOS technology suitable for switching analog signals and digital signals in a 16:1 configuration.
Product Features and Performance
Single 16:1 Multiplexer/Demultiplexer Circuit
On-State Resistance: 300 Ohm max
Channel to Channel Matching: 15 Ohm
Supply Voltage: Single (10.8V to 16.5V), Dual (±10.8V to ±16.5V)
Maximum Switching Time: 300ns for turn-on and turn-off
Charge Injection: 4pC
Channel Capacitance: 5pF (CS(off)), 44pF (CD(off))
Maximum Leakage Current: 1nA
Operating Temperature range: -40°C to 85°C
Mounting Type: Through Hole
Encapsulated in a 28-Pin DIP package
Product Advantages
Accurate channel matching reduces signal distortion
Low charge injection for minimal signal disruption
Comprehensive voltage support for diverse applications
Durable in a wide range of temperatures
Key Technical Parameters
Multiplexer/Demultiplexer Circuit: 16:1
On-State Resistance (Max): 300Ohm
Voltage Supply Range: 10.8V ~ 16.5V (Single), ±10.8V ~ ±16.5V (Dual)
Switch Time (Max): 300ns
Operating Temperature: -40°C ~ 85°C
Quality and Safety Features
Supported by rigorous testing and durability in harsh temperature environments
Low leakage current ensures safety in operation
Compatibility
Suitable for integration with a wide range of analog and digital devices
Through Hole mounting compatible with standard PCB designs
Application Areas
Telecommunications
Data Acquisition Systems
Test Equipment
Military and Aerospace
Product Lifecycle
Status: Active
No announced discontinuation; long-term availability is likely
Several Key Reasons to Choose This Product
High signal integrity due to low on-state resistance and precise channel matching
Versatile voltage supply options catering for both single and dual supply setups
Fast switching capability suitable for high-frequency applications
Robust performance across a broad operating temperature range, making it suitable for harsh environments
Minimal disturbance to signal path as indicated by low charge injection and capacitance