Sumitomo Heavy Industries will launch SiC ion implantation machines in Japan
According to foreign media reports, Sumitomo Heavy Industries subsidiary, Sumitomo Ion Technology, will launch ion implantation machines for silicon carbide (SiC) power semiconductors in the market as early as 2025.
Most of the equipment used in the SiC process is the same as traditional silicon production lines, but due to the high hardness of SiC, special production equipment is required, such as high-temperature ion implantation machines, carbon film sputtering machines, mass production high-temperature annealing furnaces, etc. Among them, the presence of high-temperature ion implantation machines is an important criterion for measuring SiC production lines.
According to the report, ion implantation equipment injects impurity ions such as phosphorus and boron into the wafer to change its electrical properties. For silicon wafers, heat treatment is performed after ion implantation to restore crystallinity. However, for SiC, it is difficult to restore crystallinity solely through heat treatment after ion implantation. The usual method is to heat the SiC chip to about 500 degrees Celsius, then perform ion implantation and heat treatment. Due to its complex operating process, SiC semiconductors have the problem of lower yield than silicon semiconductors.
This time, Sumitomo Heavy Industries Ion Technology plans to improve the ion implantation method of its launched products, while maintaining SiC quality and increasing production.
Due to factors such as high technical difficulty and difficult process validation, there are high competitive barriers and high industry concentration in the ion implantation machine industry. Overall, the entire market is mainly monopolized by American Applied Materials Company and American Axcelis Company, accounting for more than 70% of the global market.
The latest data from TrendForce Consulting shows that SiC is still accelerating its penetration in application markets such as automobiles and renewable energy where power density and efficiency are extremely important. The overall market demand will maintain a growth trend in the coming years, and it is estimated that the global SiC power device market size is expected to reach 9.17 billion US dollars in 2028.