Samsung launches 12nm level 32Gb DDR5 DRAM, supporting up to 128GB memory modules
According to wccftech, Samsung has announced the launch of the world's first 32Gb DDR5 DRAM solution based on 12nm process technology, which can support up to 128GB of memory modules.
So far, memory manufacturers such as SK Hynix and Micron have provided 24Gb DDR5 DRAM, which can achieve a 96GB memory solution, but Samsung has increased capacity by 33.3% with a 12nm level solution. At the same time, Micron has also confirmed the launch of 32Gb DDR5 DRAM, but so far only a roadmap has been released.
Samsung announced the start of mass production of 12nm level 16Gb DDR5 DRAM in May this year. The new 12nm level 32Gb DDR5 DRAM is planned to begin mass production at the end of this year.
Samsung stated that with a 12nm level 32Gb DRAM, a solution that can achieve up to 1TB of DRAM modules can meet the growing demand for high-capacity DRAM in the era of artificial intelligence.
Samsung developed its first 64kb DRAM in 1983 and has successfully increased its DRAM capacity by 500000 times over the past forty years.
Samsung's latest memory products are developed using cutting-edge processes and technologies to improve integration density and design optimization. They have the industry's highest single DRAM chip capacity and provide twice the capacity of 16Gb DDR5 DRAM in the same packaging size.
Previously, DDR5 128GB DRAM modules manufactured using 16Gb DRAM required the use of Silicon Through Hole (TSV) technology. Now, by using Samsung 32Gb DRAM, 128GB modules can be produced without the use of TSV technology, while reducing power consumption by about 10% compared to 128GB modules using 16Gb DRAM. This technological breakthrough makes this product one of the best solutions for energy efficiency conscious enterprises such as data centers.
Based on the 12nm level 32Gb DDR5 DRAM, Samsung plans to continue expanding its high-capacity DRAM product lineup to meet the current and future needs of the computing and IT industries. Samsung will reaffirm its leadership position in the next generation DRAM market by providing 12nm level 32Gb DRAM to customers in data centers, artificial intelligence, and next-generation computing applications.
Samsung announced the start of mass production of 12nm level 16Gb DDR5 DRAM in May this year. The new 12nm level 32Gb DDR5 DRAM is planned to begin mass production at the end of this year.
Samsung stated that with a 12nm level 32Gb DRAM, a solution that can achieve up to 1TB of DRAM modules can meet the growing demand for high-capacity DRAM in the era of artificial intelligence.
Samsung developed its first 64kb DRAM in 1983 and has successfully increased its DRAM capacity by 500000 times over the past forty years.
Samsung's latest memory products are developed using cutting-edge processes and technologies to improve integration density and design optimization. They have the industry's highest single DRAM chip capacity and provide twice the capacity of 16Gb DDR5 DRAM in the same packaging size.
Previously, DDR5 128GB DRAM modules manufactured using 16Gb DRAM required the use of Silicon Through Hole (TSV) technology. Now, by using Samsung 32Gb DRAM, 128GB modules can be produced without the use of TSV technology, while reducing power consumption by about 10% compared to 128GB modules using 16Gb DRAM. This technological breakthrough makes this product one of the best solutions for energy efficiency conscious enterprises such as data centers.
Based on the 12nm level 32Gb DDR5 DRAM, Samsung plans to continue expanding its high-capacity DRAM product lineup to meet the current and future needs of the computing and IT industries. Samsung will reaffirm its leadership position in the next generation DRAM market by providing 12nm level 32Gb DRAM to customers in data centers, artificial intelligence, and next-generation computing applications.