The BF245 is primarily utilized for amplifying signals within VHF, UHF bands, and audio frequencies. With high gain and low noise attributes, it adeptly amplifies small signals while minimizing noise interference.
The series, including BF245, BF245A, BF245B, and BF245C, shows distinct electrical characteristics, mostly in gate-source voltage and zero-gate voltage drain current. These differences cater to specific applications, offering versatility in optimizing circuit designs for diverse signal amplification needs. Efficacy in VHF and UHF bands is remarkable due to their ability to manage and amplify weaker signals, enhancing signal clarity and strength, basic for broadcasting and communication systems.
In audio frequency applications, the BF245 excels by preserving signal integrity and minimizing distortion, used in high-fidelity audio equipment. Its ability to filter out noise ensures cleaner audio output. Compared to similar transistors, the BF245's balance between high gain and low noise makes it a popular choice. You can often prefer this component for its robustness and reliability in demanding environments.
PIN |
SYMBOL |
DESCRIPTION |
1 |
g |
Gate |
2 |
s |
Source |
3 |
d |
Drain |
Feature |
Specification |
Package Type |
TO-92 |
Transistor Type |
N Channel JFET |
Drain-Source Voltage |
30V (Maximum) |
Drain-Gate Voltage |
30V (Maximum) |
Reverse Gate-Source Voltage |
–30V (Maximum) |
Continuous Drain Current |
25mA (Maximum) |
Gate-Source Cutoff Voltage |
-0.5V to –0V |
Power Dissipation |
300mW (Maximum) |
Storage & Operating Temperature |
-55°C to +150°C |
Noise Level & Gain |
Low Noise & High Gain |
Operating Frequency |
Up to 700 MHz |
Drain and Source Interchangeability |
Yes |
Here is the technical specification table for the ON Semiconductor BF245B JFET.
Type |
Parameter |
Lifecycle Status |
Obsolete |
Last Shipments |
Last Updated: 1 week ago |
Mount |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
Number of Pins |
3 |
Weight |
200 mg |
Breakdown Voltage / V |
-30 V |
Number of Elements |
1 |
Packaging |
Bulk |
Published |
2009 |
JESD-609 Code |
e0 |
Pbfree Code |
No |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin/Lead (Sn/Pb) |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
HTS Code |
8541.21.00.75 |
Voltage - Rated DC |
30 V |
Current Rating (Amps) |
100 mA |
Max Power Dissipation |
350 mW |
Terminal Position |
Bottom |
Peak Reflow Temperature (°C) |
240 |
Reach Compliance Code |
Not Compliant |
Current Rating |
10 mA |
Time@Peak Reflow Temp-Max (s) |
30 |
Base Part Number |
BF245 |
Pin Count |
3 |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Operating Mode |
Depletion Mode |
Power Dissipation |
350 mW |
Transistor Application |
Amplifier |
Drain to Source Voltage (Vdss) |
15 V |
Transistor Type |
N-Channel JFET |
Continuous Drain Current (ID) |
15 mA |
Gate to Source Voltage (Vgs) |
-30 V |
Drain Current-Max (Abs) (ID) |
0.1 A |
Drain to Source Breakdown Voltage |
30 V |
FET Technology |
Junction |
Highest Frequency Band |
Ultra High Frequency B |
Height |
4.58 mm |
Length |
4.58 mm |
Width |
3.86 mm |
RoHS Status |
Non-RoHS Compliant |
Lead Free |
Lead Free |
• BF245C
• 2N5457
• 2SK117
• MPF102
• 2N5458
• BF244A
• BF256A
• J113
• 2N3819
• 2N4416
• 2N5638
• 2SK162
The BF245 finds extensive use in amplifying VHF (Very High Frequency) and UHF (Ultra High Frequency) signals. These frequencies play a role in radio communication, television broadcasting, and wireless devices, requiring detailed amplification to maintain signal clarity. You can explore into sophisticated configurations to enhance performance, contemplating challenges like signal distortion and noise management. This pursuit often aligns with the emotional satisfaction of achieving technical excellence.
This transistor plays a part in crafting RF oscillators, which generate stable and precise frequency signals. Its low noise feature enriches the quality of output signals, a factor cherished in telecommunications and broadcasting circles. You can invest the emotional and intellectual effort to minimize harmonic distortion while preserving frequency stability, drawing insights from hands-on experiences to adjust circuit parameters.
In the domain of audio amplification, the BF245 provides dependable support for low-power audio signals. Its role in audio circuits ensures minimal distortion, making it suitable for high-fidelity audio systems. The art of balancing power consumption with performance becomes an exact task, you can enjoy refining to enhance the listening experience, informed by practical expertise in correctly biasing the transistor.
For low-level signal processing, often seen in analytical and measurement instruments, the BF245 demonstrates its worth. Handling weak signals adeptly ensures data integrity. Working with this transistor in fields such as environmental monitoring and biomedical engineering becomes an exploration of customizing circuits to meet precise measurement needs, enjoying the intellectual engagement this entails.
The BF245 enhances sensor circuits by amplifying weak signals from diverse sensors. Whether in temperature, pressure, or humidity sensing, this transistor provides stable amplification, facilitating accurate sensor data interpretation. You can seek to refine sensor circuits, focusing on minimizing response times and enhancing sensitivity, all while appreciating the BF245’s consistent performance across different conditions.
ON Semiconductor serves the semiconductor sector with a diverse array of products. The company specializes in power and signal management, logical components, and discrete and tailored devices like automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace, and power applications. ON Semiconductor operates an extensive network in North America, Europe, and Asia Pacific. The company is headquartered in the vibrant city of Phoenix, Arizona, a hub that fuels its innovative spirit.
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